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参数资料
| 型号： | 2SJ319L-E |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 103K |
| 代理商： | 2SJ319L-E |
2SJ319(L), 2SJ319(S)
Preliminary
R07DS0396EJ0300 Rev.3.00
Page 2 of 6
May 16, 2011
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–200
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG = ±100 μA, VDS = 0
Gate to source leak current
IGSS
—
±10
μA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–100
μA
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
—
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
1.7
2.3
Ω
ID = –2 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
1.0
1.7
—
S
ID = –2 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
330
—
pF
Output capacitance
Coss
—
130
—
pF
Reverse transfer capacitance
Crss
—
25
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
10
—
ns
Rise time
tr
—
30
—
ns
Turn-off delay time
td (off)
—
40
—
ns
Fall time
tf
—
30
—
ns
ID = –2 A
VGS = –10 V
RL = 15 Ω
Body to drain diode forward voltage
VDF
—
–1.15
—
V
IF = –3 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
180
—
ns
IF = –3 A, VGS = 0
diF/dt = 50 A/μs
Note:
3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ321 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
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