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参数资料
| 型号： | 2SJ319L-E |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 103K |
| 代理商： | 2SJ319L-E |
2SJ319(L), 2SJ319(S)
Preliminary
R07DS0396EJ0300 Rev.3.00
Page 4 of 6
May 16, 2011
5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
1
2
3
4
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(Ω
)
Static Drain to Source on State Resistance
vs. Temperature
VGS = –10 V
Pulse Test
ID = –5 A
–2 A
–1 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
3
2
0.5
1
0.2
0.1
–0.05 –0.1 –0.2
–0.5 –1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
500
200
100
20
50
10
5
di / dt = 50 A /
μs, V
GS = 0
duty
≤ 1 %, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
50
20
10
5
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–500
–400
–300
–200
–100
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
500
200
100
20
50
10
5
–0.1 –0.2
–0.5 –1
–5
–2
–10
–0.05
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –50 V
–100 V
–150 V
VDD = –150 V
–100 V
–50 V
VGS = –10 V, VDD = –30 V
PW = 2
μs, duty ≤ 1 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ321 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
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