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参数资料
| 型号： | 2SJ319L-E |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 5/7页 |
| 文件大小： | 103K |
| 代理商： | 2SJ319L-E |
2SJ319(L), 2SJ319(S)
Preliminary
R07DS0396EJ0300 Rev.3.00
Page 5 of 6
May 16, 2011
–5
0
–1
–2
–3
–4
0
Source to Drain Voltage
VSD
(V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–10 V
VGS = 0, 5 V
tr
td(on)
Vin
90%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 6.25°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
Ω
VDD
= –30 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ321 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
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