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参数资料
| 型号： | 2SJ346 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | USM, 2-2E1A, SC-70, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 293K |
| 代理商： | 2SJ346 |
2SJ346
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ346
High Speed Switching Applications
Analog Switch Applications
Low threshold voltage: Vth = 0.5 to 1.5 V
High speed
Small package
Complementary to 2SK1829
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
7
V
DC drain current
ID
50
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gateate leakage current
IGSS
VGS = 7 V, VDS = 0
1
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 100 μA, VGS = 0
20
V
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0
1
μA
Gate threshould voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.5
1.5
V
Forward transfer admittance
Yfs
VDS = 3 V, ID = 10 mA
15
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
20
40
Ω
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
10.4
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
2.8
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
8.4
pF
Turn-on time
ton
VDD = 3 V, ID = 10 mA,
VGS = 0~2.5 V
0.15
Switching time
Turn-off time
toff
VDD = 3 V, ID = 10 mA,
VGS = 0~2.5 V
0.13
μs
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ346_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| 2SJ347 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANAROG SWITCH APPLICATIONS) |
| 2SJ347(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 20V 0.05A 3-Pin SSM T/R |
| 2SJ347_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type |
| 2SJ347T5LFT | 制造商:Toshiba America Electronic Components 功能描述:HIGH SPEED SWITCHING MOSFETS |
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