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参数资料
| 型号： | 2SJ351-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 83K |
| 代理商： | 2SJ351-E |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ357-AZ | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357-T1 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
| 2SJ352-E | 功能描述:MOSFET P-CH 200V 8A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ353 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ355 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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