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参数资料
| 型号： | 2SJ351-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 83K |
| 代理商： | 2SJ351-E |
2SJ351, 2SJ352
Rev.2.00 Sep 07, 2005 page 3 of 5
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
–10
0
–2
–4
–6
–8
0
–10
–20
–30
–40
–50
150
0
50
100
0
50
100
150
–9
–1 V
–2
–3
–4
–5
–6
–7
–8
VGS = 0
V
GS
=
–10
V
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–5
–2
–1
–0.5
–0.2
–5
–10 –20
–50 –100 –200
–500
–20
–10
Ta = 25°C
Tc = 25°C
ID max (Continuous)
2SJ352
2SJ351
PW
= 100
ms
(1
shot)
PW
= 1
s
(1
shot)
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
Pch
= 125
W
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
Tc
=
–25°C
75°C
VDS = –10 V
25°C
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
–1 V
–2
–3
–4
–5
–6
–7
–8
–9
Tc = 25°C
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–0.4
–0.8
–1.2
–1.6
–2.0
Tc = –25°C
75°C
VDS = –10 V
VGS = –10 V
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
| 2SJ352-E | 功能描述:MOSFET P-CH 200V 8A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ353 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ355 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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