- 您现在的位置：买卖IC网 > PDF目录30599 > 2SJ351-E 8 A, 180 V, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ351-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 83K |
| 代理商： | 2SJ351-E |
2SJ351, 2SJ352
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
2SJ351
–180
Drain to source voltage
2SJ352
VDSX
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–8
A
Body to drain diode reverse drain current
IDR
–8
A
Channel dissipation
Pch
Note 1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
2SJ351
–180
—
V
Drain to source breakdown
voltage
2SJ352
V (BR) DSX
–200
—
V
ID = –10 mA, VGS = 10 V
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.15
—
–1.45
V
ID = –100 mA, VDS = –10 V
Drain to source saturation voltage
VDS (sat)
—
–12
V
ID = –8 A, VGS = 0
Note 2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = –3 A, VDS = –10 V
Note 2
Input capacitance
Ciss
—
800
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
18
—
pF
VGS = 5 V, VDS = –10 V,
f = 1 MHz
Turn-on time
ton
—
320
—
ns
Turn-off time
toff
—
120
—
ns
VDD = –30 V ID = –4 A
Note:
2. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ357-AZ | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357-T1 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
| 2SJ352-E | 功能描述:MOSFET P-CH 200V 8A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ353 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ355 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
发布紧急采购，3分钟左右您将得到回复。