参数资料
型号: 2SJ351-E
元件分类: JFETs
英文描述: 8 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
封装: SC-65, TO-3P, 3 PIN
文件页数: 3/6页
文件大小: 83K
代理商: 2SJ351-E
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ351, 2SJ352
Silicon P Channel MOS FET
REJ03G0860-0200
(Previous: ADE-208-1193)
Rev.2.00
Sep 07, 2005
Description
Low frequency power amplifier
Complementary pair with 2SK2220, 2SK2221
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1. Gate
2. Source (Flange)
3. Drain
D
G
S
1
2
3
相关PDF资料
PDF描述
2SJ357-AZ 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ357 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ357-T1 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ357 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ358-T2-AZ 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SJ352 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube
2SJ352-E 功能描述:MOSFET P-CH 200V 8A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ353 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SJ355 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING
2SJ355-AZ 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA