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参数资料
| 型号： | 2SJ518 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 10/12页 |
| 文件大小： | 63K |
| 代理商： | 2SJ518 |
2SJ518
5
–5
–4
–3
–2
–1
0
–4
–8
–12
–16
–20
1.0
0.8
0.6
0.4
0.2
–40
0
40
80
120
160
0
I
= –2 A
D
GS
V
= –4 V
–0.1
–1
–10
–0.2
–0.5
–2
–5
10
5
0.5
0.2
0.1
–0.1 –0.2
–0.5
–1
–2
–5
–10
I
= –2 A
D
–1 A
2
1
–0.5 A
10
5
0.5
0.2
0.1
2
1
–10 V
V
= –4 V
GS
75 °C
25 °C
Ta = –25 °C
DS
V
= –10 V
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
–0.5, –1 A
–2 A
–10 V
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PDF描述 |
|---|---|
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| 2SK1341 | 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1748 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1933 | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,2A,0.35ohm,UPAK |
| 2SJ520 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ520TP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-252VAR |
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