- 您现在的位置：买卖IC网 > PDF目录67311 > 2SJ518 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ518 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 63K |
| 代理商： | 2SJ518 |
2SJ518
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.35
0.46
I
D = –1A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.45
0.63
I
D = –1A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1.2
2.0
—
S
I
D = –1A, VDS = –10V
Note4
Input capacitance
Ciss
—
220
—
pF
V
DS = –10V
Output capacitance
Coss
—
110
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
35
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = –10V, ID = –1A
Rise time
t
r
—
11
—
ns
R
L = 30
Turn-off delay time
t
d(off)
—45
—
ns
Fall time
t
f
—30
—
ns
Body–drain diode forward voltage
V
DF
—
–1.05
—
V
I
D = –2A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
50
—
ns
I
F = –2A, VGS = 0
diF/ dt = 50A/
s
Note:
4. Pulse test
5. Marking is “AZ”
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ553L-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553STL-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK1341 | 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1748 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1933 | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,2A,0.35ohm,UPAK |
| 2SJ520 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ520TP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-252VAR |
发布紧急采购，3分钟左右您将得到回复。