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参数资料
| 型号： | 2SJ518 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 63K |
| 代理商： | 2SJ518 |
2SJ518
4
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
–1
–3
–10
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
–5 V
–4 V
0
–1–2–3
–4
–5
–30
–100
–30
–10 V
–3.5 V
–3 V
–5
–4
–3
–2
–1
V
= –2.5 V
GS
DC
Operation
1 ms
PW
=
10
ms
(1
shot)
100 s
Ta = 25 °C
–6 V
–25 °C
25 °C
Tc = 75 °C
Pulse Test
DS
V
= –10 V
Pulse Test
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
Drain
Current
I
(A)
D
Ambient Temperature
Ta (°C)
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
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PDF描述 |
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| 2SK1341 | 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1748 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1933 | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,2A,0.35ohm,UPAK |
| 2SJ520 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ520TP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-252VAR |
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