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参数资料
| 型号： | 2SJ518 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 11/12页 |
| 文件大小： | 63K |
| 代理商： | 2SJ518 |
2SJ518
6
100
20
50
10
–0.1 –0.2
–1
–5
–10
0
–10
–20
–30
–40
–50
1000
300
100
30
10
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
48
12
16
20
100
20
50
10
2
5
1
–0.1 –0.2
–0.5 –1
–2
–5
–10
–0.5
–2
3
1
DS
V
GS
V
= –10 V
–25 V
–50 V
DD
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
V
= –10 V
–25 V
–50 V
DD
D
I
= –2 A
t f
r
t
d(off)
t
d(on)
t
DD
V
= –10 V, V
= –30 V
Ta = 25°C, duty < 1 %
GS
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
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| 2SK1341 | 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1748 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1933 | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTR-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,2A,0.35ohm,UPAK |
| 2SJ520 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ520TP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-252VAR |
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