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参数资料
| 型号： | 2SK2414-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 58K |
| 代理商： | 2SK2414-AZ |
1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 70 m
MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 m
MAX. (@ VGS = 4 V, ID = 5.0 A)
Low Ciss
Ciss = 840 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)*
ID(pulse)
±40
A
Total Power Dissipation (Tc = 25 C)
PT1
20
W
Total Power Dissipation (TA = 25 C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
10
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
MP-3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
1.3 MAX.
1.6
±0.2
12 3
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3 2.3
0.75
4
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
4.3
MAX.
1.3 MAX.
2.3 2.3
12
3
4
5.5
±0.2
10.0
MAX.
1.5
+0.2
–0.1
1.5
+0.2
–0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0 MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2414-Z-AZ | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2417 | 7.5 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2463T100 | 2 A, 60 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2499-AZ | 50 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2499 | 50 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2414-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2414-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 |
| 2SK2414-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2415 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK2415-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-251 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-251 |
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