参数资料
型号: 2SK2414-AZ
元件分类: 小信号晶体管
英文描述: 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MP-3, 3 PIN
文件页数: 5/8页
文件大小: 58K
代理商: 2SK2414-AZ
2SK2414, 2SK2414-Z
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0
–50
VGS = 0
Tch - Channel Temperature - °C
40
100
60
0
50
150
100
VGS = 4 V
VGS = 10 V
10
1
VDS - Drain to Source Voltage - V
10
100
1000
10000
VSD - Source to Drain Voltage - V
ID - Drain Current - A
1000
100
10
1.0
0.1
1.0
10
100
tf
td (on)
td (off)
ID - Drain Current - A
Qg - Gate Charge - nC
10
0.1
1.0
10
100
010
20
30
40
20
40
60
80
0
2
4
6
8
10
12
14
16
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
trr
-
Reverse
Recovery
time
-
ns
td
(on)
,t
r,
t
d
(off)
,t
f-
Switching
Time
-
ns
V
DS
-
Drain
to
Source
Voltage
-
V
GS
-
Gate
to
Source
Voltage
-
V
ISD
-
Diode
Forward
Current
-
A
ID = 5 A
VDD = 30 V
VGS = 10 V
RG = 10
2.0
1.0
0.1
VGS = 10 V
–25
75
25
125
20
80
120
tr
Pulsed
50
ID = 10 A
VDD = 48 V
VDS
VGS
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
di/dt = 50 A/ s
VGS = 0
相关PDF资料
PDF描述
2SK2414-Z-AZ 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2417 7.5 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
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2SK2499-AZ 50 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2499 50 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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