参数资料
型号: 2SK2414-AZ
元件分类: 小信号晶体管
英文描述: 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MP-3, 3 PIN
文件页数: 4/8页
文件大小: 58K
代理商: 2SK2414-AZ
2SK2414, 2SK2414-Z
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1000
100
10
1
0.1
10
100
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
100
10
1
10
100
ID - Drain Current - A
120
100
80
60
40
20
010
20
VGS - Gate to Source Voltage - V
2.0
–50
1.5
1.0
0.5
0
50
100
150
Tch - Channel Temperature - °C
VDS = 10 V
ID = 1 mA
1
ID - Drain Current - A
100
80
60
0
10
100
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
|y
fs
|-
Forward
Transfer
Admittance
-
S
rth
(t)
-
Transient
Thermal
Resistance
-
°C/W
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
V
GS
(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
VDS = 10 V
Pulsed
120
75 °C
125 °C
Pulsed
ID = 5 A
40
20
0.01
Single Pulse
515
–25
25
75
125
TA = –25 °C
25 °C
Rth (ch-a) = 125 °C/W
Rth (ch-c) = 6.25 °C/W
ID = 5 A
VGS = 10 V
VGS = 4 V
Pulsed
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2SK2414-Z-AZ 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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