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参数资料
| 型号： | 2SK2729 |
| 元件分类： | JFETs |
| 英文描述： | 0.29 ohm, POWER, FET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 50K |
| 代理商： | 2SK2729 |
2SK2729
4
Main Characteristics
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
50
40
30
20
10
0
10
20
30
40
50
40
30
20
10
0
24
68
10
0.3
0.1
1000
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
10
s
100
s
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
Ta = 25
°C
Operation in
this area is
limited by R DS(on)
V
= 4 V
GS
6 V
5.5 V
4.5 V
5 V
10 V
8 V
6.5 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
V
= 10 V
Pulse Test
DS
1
3
10
30
100
300
1000
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2735S | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2737 | 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2744 | 45 A, 50 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2745 | 50 A, 50 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2730-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box |
| 2SK2731T146 | 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2733(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220 |
| 2SK2735L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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