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参数资料
| 型号： | 2SK2729 |
| 元件分类： | JFETs |
| 英文描述： | 0.29 ohm, POWER, FET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 50K |
| 代理商： | 2SK2729 |
2SK2729
6
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
di / dt = 100 A /
s
V
= 0, Ta = 25
°C
GS
010
20
30
40
50
2000
5000
1000
100
200
500
400
300
200
100
0
20
16
12
8
4
20
40
60
80
100
0
1000
200
500
100
20
10
50
0.1
0.3
1
3
10
30
100
20
50
10
5
V
= 100 V
250 V
400 V
DD
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
V
= 400 V
250 V
100 V
DD
I = 20 A
D
VDS
VGS
10000
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
t f
r
t
d(on)
t
d(off)
t
V
= 10 V, V
= 30 V
PW = 10
s, duty < 1 %
GS
DD
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2735S | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2737 | 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2744 | 45 A, 50 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2745 | 50 A, 50 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2730-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box |
| 2SK2731T146 | 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2733(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220 |
| 2SK2735L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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