参数资料
型号: 2SK2729
元件分类: JFETs
英文描述: 0.29 ohm, POWER, FET
封装: TO-3P, 3 PIN
文件页数: 6/10页
文件大小: 50K
代理商: 2SK2729
2SK2729
5
10
8
6
4
2
0
48
12
16
20
1
5
20
100
210
50
2
1
0.5
0.2
0.1
1.0
0.8
0.6
0.4
0.2
–40
0
40
80
120
160
0
0.1 0.2
1
2
10 20
50
10
20
2
5
1
0.2
0.5
0.1
V
= 10 V, 15 V
GS
0.5
5
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(
°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
I
= 20 A
D
V
= 10 V
GS
10 A
5 A
25
°C
Tc = –25
°C
75
°C
I
= 20 A
D
10 A
5 A
Pulse Test
V
= 10 V
Pulse Test
DS
相关PDF资料
PDF描述
2SK2735L 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2735S 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2737 45 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2744 45 A, 50 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2745 50 A, 50 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK2729(E) 制造商:Renesas Electronics Corporation 功能描述:
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2SK2731T146 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK2733(F) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220
2SK2735L(E) 制造商:Renesas Electronics Corporation 功能描述: