参数资料
型号: 2SK3058-S
元件分类: JFETs
英文描述: 55 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: FIN CUT, MP-25, TO-262, 3 PIN
文件页数: 5/10页
文件大小: 206K
代理商: 2SK3058-S
Data Sheet D13097EJ2V0DS
2
2SK3058
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 28 A
12
17
m
RDS(on)2
VGS = 4.0 V, ID = 28 A
19
27
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 28 A
13
42
S
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
VDS = 10 V
2100
pF
Output Capacitance
Coss
VGS = 0 V
550
pF
Reverse Transfer Capacitance
Crss
F = 1 MHz
220
pF
Turn-on Delay Time
td(on)
ID = 28 A
36
ns
Rise Time
tr
VGS = 10 V
410
ns
Turn-off Delay Time
td(off)
VDD = 30 V
130
ns
Fall Time
tf
RG = 10
260
ns
Total Gate Charge
QG
ID = 55 A
45
nC
Gate to Source Charge
QGS
VDD = 48 V
7
nC
Gate to Drain Charge
QGD
VGS = 10 V
13
nC
Body Diode Forward Voltage
VF(S-D)
IF = 55 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 55 A, VGS = 0 V
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/
s
100
nC
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
PG.
RG = 10
D.U.T.
RL
VDD
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
5
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