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参数资料
| 型号： | 2SK3058-S |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | FIN CUT, MP-25, TO-262, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 206K |
| 代理商： | 2SK3058-S |
Data Sheet D13097EJ2V0DS
4
2SK3058
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.1
1
10
100
01
2
3
4
5
Pulsed
VDS = 10 V
TA = 125C
75C
25C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
4
80
100
1
Pulsed
VGS = 10 V
VGS = 4.0 V
60
40
20
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS = 10 V
Pulsed
0.1
1.0
1
10
100
10
100
0.1
Tch =
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
010
20
10
30
50
70
20
30
Pulsed
60
40
ID = 28 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
40
1
0.1
60
80
10
100
0
20
Pulsed
VGS = 10 V
VGS = 4.0 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
50
100
150
0
1.0
2.0
1.5
0.5
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| 2SK3075 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| 2SK3096 | 7 A, 400 V, 0.87 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3107 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3058-Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263ABVAR |
| 2SK3058-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3059 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK3060 Data Sheet | Data Sheet[04/2001] |
| 2SK3060-S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-262AA |
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