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参数资料
| 型号： | 2SK3163-E |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 88K |
| 代理商： | 2SK3163-E |
2SK3163
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
75
A
Drain peak current
ID(pulse)
Note 1
300
A
Body-drain diode reverse drain current
IDR
75
A
Avalanche current
IAP
Note 3
50
A
Avalanche energy
EAR
Note 3
214
mJ
Channel dissipation
Pch
Note 2
110
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
±0.1
A
VGS =
±20 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
Note 1
—
6.0
7.5
m
ID = 40 A, VGS = 10 V
Note 1
Static drain to source on state
resistance
RDS(on)
—
8.0
12
m
ID = 40 A, VGS = 4 V
Note 1
Forward transfer admittance
|yfs|
50
80
—
S
ID = 40 A, VDS = 10 V
Note 1
Input capacitance
Ciss
—
7100
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
280
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
—
125
—
nC
Gate to source charge
Qgs
—
25
—
nC
Gate to drain charge
Qgd
—
25
—
nC
VDD = 25 V, VGS = 10 V,
ID = 75 A
Turn-on delay time
td(on)
—
60
—
ns
Rise time
tr
—
300
—
ns
Turn-off delay time
td(off)
—
520
—
ns
Fall time
tf
—
330
—
ns
VGS = 10 V, ID = 40 A,
RL = 0.75
Body–drain diode forward voltage
VDF
—
1.05
—
V
IF = 75 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
90
—
ns
IF = 75 A, VGS = 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
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