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参数资料
| 型号： | 2SK3163-E |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 88K |
| 代理商： | 2SK3163-E |
2SK3163
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
80
60
40
20
0
24
6
8
10
D
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
Operation in
this area is
limited by RDS(on)
PW
=
10
ms
(1
shot)
3.5 V
3 V
50
VGS = 10 V
5 V
4 V
2.5 V
100
80
60
40
20
0
12
34
5
Tc = –25
°C
25
°C
75
°C
VDS = 10 V
Pulse Test
0
48
12
16
20
2.0
1.6
1.2
0.8
0.4
Pulse Test
ID = 50 A
20 A
10 A
1
20
100
2
100
2
5
1
10
200
20
10
VGS = 4 V
10 V
Pulse Test
50
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3163 | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK3204 | 15 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3211L-E | 25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3212-E | 10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK317 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 8A I(D) | SOT-119VAR |
| 2SK3174A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3175A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3176 | 功能描述:MOSFET N-CH 200V 30A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3176(F) | 功能描述:MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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