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参数资料
| 型号： | 2SK3295-ZK |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZK, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 71K |
| 代理商： | 2SK3295-ZK |
Data Sheet D14064EJ2V0DS
2
2SK3295
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 18 A
7.5
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 18 A
13
18
m
RDS(on)2
VGS = 4.5 V, ID = 18 A
21
27
m
Input Capacitance
Ciss
VDS = 10 V
720
pF
Output Capacitance
Coss
VGS = 0 V
370
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
180
pF
Turn-on Delay Time
td(on)
VDD = 10 V , ID = 18 A
85
ns
Rise Time
tr
VGS(on) = 10 V
2000
ns
Turn-off Delay Time
td(off)
RG = 10
65
ns
Fall Time
tf
270
ns
Total Gate Charge
QG
VDD = 16 V
16
nC
Gate to Source Charge
QGS
VGS = 10 V
3.1
nC
Gate to Drain Charge
QGD
ID = 35 A
5.2
nC
Body Diode Forward Voltage
VF(S-D)
IF = 35 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 35 A, VGS = 0 V
28
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s14
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3296 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3296-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3296-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3296-ZK | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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