参数资料
型号: 2SK3295-ZK
元件分类: JFETs
英文描述: 35 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: MP-25ZK, 3 PIN
文件页数: 4/8页
文件大小: 71K
代理商: 2SK3295-ZK
Data Sheet D14064EJ2V0DS
4
2SK3295
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
20
10
0
50
100
150
40
30
7.0 V
10 V
ID = 18 A
Pulsed
VGS = 4.5 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ISD
-
Diode
Forward
Current
-
A
0
2.0
1.6
VSD - Source to Drain Voltage - V
1.2
0.8
0.4
Pulsed
0.1
0.01
1
10
100
1000
0 V
4.5 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
10
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
10000
1000
10
100
VDD = 10 V
VGS = 10 V
RG = 10
tf
tr
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
ISD - Diode Forward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
15
520
10
5
15
20
4
2
0
8
6
VDS
16
14
12
10
VGS
ID = 35 A
VDD = 16 V
10 V
4 V
相关PDF资料
PDF描述
2SK3298-AZ 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3298-AZ 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3298 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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