参数资料
型号: 2SK3295-ZK
元件分类: JFETs
英文描述: 35 A, 20 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: MP-25ZK, 3 PIN
文件页数: 6/8页
文件大小: 71K
代理商: 2SK3295-ZK
Data Sheet D14064EJ2V0DS
6
2SK3295
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2)TO-262
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
3)TO-263 (MP-25ZK)
10.0±0.2
8.0
TYP.
2.54
0.7±0.15
9.15±0.2
2.45±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
4)TO-263 (MP-25ZJ)
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually used, an additional protection circuit is
externally required if a voltage exceeding the rated voltage may be
applied to this device.
相关PDF资料
PDF描述
2SK3298-AZ 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3298-AZ 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3298 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3298 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3299-ZJ 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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