参数资料
型号: 2SK3314
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI−MOSV)
文件页数: 1/6页
文件大小: 263K
代理商: 2SK3314
2SK3314
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3314
Chopper Regulator, DC
DC Converter Applications
Motor Drive Applications
Fast reverse recovery time
Built
in high
speed free
wheeling diode
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
= 100 μA (max) (V
DS
= 500 V)
Enhancement
mode
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
: t
rr
= 105 ns (typ.)
: R
DS (ON)
= 0.35
(typ.)
: |Y
fs
| = 9.9 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
15
A
Drain current
Pulse (Note 1)
I
DP
60
A
Drain power dissipation (Tc
=
25°C)
P
D
150
W
Single pulse avalanche energy
(Note 2)
E
AS
630
mJ
Avalanche current
I
AR
15
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.833
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 4.76 mH, R
G
= 25
, I
AR
= 15 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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