参数资料
型号: 2SK3314
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI−MOSV)
文件页数: 2/6页
文件大小: 263K
代理商: 2SK3314
2SK3314
2002-01-25
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V
,
V
DS
= 0 V
±10
μA
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±100 μA
,
V
DS
= 0 V
±30
V
Drain cut
off current
I
DSS
V
DS
= 500 V
,
V
GS
= 0 V
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
500
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.0
4.0
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 7 A
0.35
0.49
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 7 A
5.0
9.9
S
Input capacitance
C
iss
2600
Reverse transfer capacitance
C
rss
280
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
880
pF
Rise time
tr
50
Turn
on time
t
on
85
Fall time
t
f
65
Switching time
Turn
off time
t
off
260
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
58
Gate
source charge
Q
gs
36
Gate
drain (“miller”) charge
Q
gd
V
DD
400 V, V
GS
= 10 V, I
D
= 15 A
22
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
15
A
Pulse drain reverse current
(Note 1)
I
DRP
60
A
Forward voltage (diode)
V
DSF
I
DR
= 15 A, V
GS
= 0 V
1.7
V
Reverse recovery time
t
rr
105
180
ns
Reverse recovery charge
Q
rr
I
DR
= 15 A, V
GS
= 0 V
dI
DR
/
dt
=
100 A
/
μs
0.24
μC
Marking
相关PDF资料
PDF描述
2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3320 N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
2SK3321 N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS)
2SK3337-01 N-CHANNEL SILICON POWER MOS-FET
2SK3338-01 TRANS PREBIASED PNP 200MW SOT323
相关代理商/技术参数
参数描述
2SK3314(Q) 功能描述:MOSFET N-ch 500V 20A 0.480 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3314_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications Motor Drive Applications
2SK3314_10 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator and DC−DC Converter Applications Motor Drive Applications
2SK3316 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220(NIS) - Rail/Tube
2SK3316(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS