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参数资料
| 型号： | 2SK3326B-S17-AY |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 257K |
| 代理商： | 2SK3326B-S17-AY |
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Document No. D18430EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP (K)
Printed in Japan
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3326B
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics,
and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low gate charge
QG = 20 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
Gate voltage rating : ±30 V
Low on-state resistance
RDS(on) = 0.85
Ω MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
500
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±10
A
Drain Current (pulse)
Note1
ID(pulse)
±40
A
Total Power Dissipation (TA = 25
°C)
PT1
2.0
W
Total Power Dissipation (TC = 25
°C)
PT2
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
10.7
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK3326B-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
(Isolated TO-220)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3326 | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3326-AZ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3335(TP) | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3335(TP-FA) | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3335TP | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK332D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 1.2MA I(DSS) | DIP |
| 2SK332E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 2.5MA I(DSS) | DIP |
| 2SK332F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 5MA I(DSS) | DIP |
| 2SK333 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 80V V(BR)DSS | 1.2MA I(DSS) | DIP |
| 2SK3332 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET |
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