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参数资料
| 型号： | 2SK3326B-S17-AY |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 257K |
| 代理商： | 2SK3326B-S17-AY |
Data Sheet D18430EJ2V0DS
3
2SK3326B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Percent
age
of
Rated
P
o
wer
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Tch - Channel Temperature -
°C
P
T
-
Total
Powe
r
Dis
s
ipation
-
W
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
-
Dr
ain
Cur
rent
-
A
0.01
0.1
1
10
100
1
10
100
1000
ID(DC)
RDS(on) Limited
(VGS = 10 V)
TC = 25
°C
Single Pulse
ID(pulse)
Po
w
er
D
iss
ip
ati
on
Lim
ite
d
10
m
s
1m
s
PW
= 1
00 μ
s
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth
(c
h
-A
)-
Tr
ansi
ent
Thermal
Res
ista
n
ce
-
°C/W
0.01
0.1
1
10
100
1000
Single pulse
Rth(ch-C) = 3.125
°C/W.
Rth(ch-A) = 62.5
°C/W.
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
相关PDF资料 |
PDF描述 |
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| 2SK3326 | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SK3335(TP) | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2SK3335TP | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
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| 2SK332D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 1.2MA I(DSS) | DIP |
| 2SK332E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 2.5MA I(DSS) | DIP |
| 2SK332F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 5MA I(DSS) | DIP |
| 2SK333 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 80V V(BR)DSS | 1.2MA I(DSS) | DIP |
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