参数资料
型号: 2SK3326B-S17-AY
元件分类: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 6/9页
文件大小: 257K
代理商: 2SK3326B-S17-AY
Data Sheet D18430EJ2V0DS
4
2SK3326B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
VGS = 20 V
Pulsed
10 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Cur
rent
-
A
0.001
0.01
0.1
1
10
100
02
46
8
10
12
14
VDS = 10 V
Pulsed
TA =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS(
o
ff
)-
Gate
C
u
t-
off
Voltage
-
V
0
1
2
3
4
5
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|
-
For
w
ard
Transfer
Admittan
ce
-
S
0.01
0.1
1
10
0.01
0.1
1
10
100
TA =
55°C
25°C
VDS = 10 V
Pulsed
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS
(o
n
)-
Dr
a
in
to
S
ourc
e
On-sta
te
Re
s
ist
ance
-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
Pulsed
ID = 10 A
2.0 A
5.0 A
VGS – Gate to Source Voltage - V
R
DS
(o
n
)-
Dr
a
in
to
S
ourc
e
On-sta
te
Re
s
ist
ance
-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
1
10
100
20 V
VGS = 10 V
Pulsed
ID - Drain Current - A
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