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参数资料
| 型号： | 2SK3326B-S17-AY |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 257K |
| 代理商： | 2SK3326B-S17-AY |
Data Sheet D18430EJ2V0DS
5
2SK3326B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS
(on)
-
Drain
t
o
So
urce
On-s
tate
Re
sis
tance
-
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
ID = 10 A
5.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature -
°C
IF
–
Diode
F
o
rward
Current
-
A
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
0 V
VGS = 10 V
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s,
C
os
s,
C
rs
s
-Cap
a
citance
-
pF
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
VGS = 0 V
f = 1 MHz
Crss
Ciss
Coss
VDS - Drain to Source Voltage – V
t
d(on)
,t
r,
t
d(
of
f)
,t
f-
S
w
itching
Time
-
ns
1
10
100
1000
0.1
1
10
100
VDD = 150 V
VGS = 10 V
RG = 10
Ω
td(off)
tf
tr
td(on)
ID - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
rr–
R
e
vers
e
Rec
o
very
T
ime
-
n
s
10
100
1000
0.1
1
10
100
di/dt = 50 A/
μs
VGS = 0 V
ID - Drain Current - A
V
DS
–
Dra
in
t
o
Sou
rce
V
o
lt
a
g
e
-
V
0
100
200
300
400
500
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10
VDS
VGS
ID = 10 A
250 V
VDD = 400 V
100 V
QG – Gate Chage - nC
V
GS
–
Gate
t
o
S
o
u
rce
Voltage
-
V
<R>
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相关代理商/技术参数 |
参数描述 |
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| 2SK332D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 1.2MA I(DSS) | DIP |
| 2SK332E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 2.5MA I(DSS) | DIP |
| 2SK332F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 5MA I(DSS) | DIP |
| 2SK333 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 80V V(BR)DSS | 1.2MA I(DSS) | DIP |
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