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参数资料
| 型号： | 2SK3364-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 50 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 117K |
| 代理商： | 2SK3364-01 |
3
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
10
4
t
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=30V,VGS=10V,RG=10
0
20
40
60
80
100
120
140
0
5
10
15
20
25
12V
30V
Vcc=48V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=80A,Tch=25°C
0
10
20
30
40
50
V
V
Qg [nC]
VGS
VDS
2SK3364-01
FUJI POWER MOSFET
-50
0
50
100
150
0
5
10
15
20
25
30
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=40A,VGS=10V
R
]
Tch [°C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=10mA
min.
typ.
max.
10
-2
10
-1
10
0
10
1
10
2
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C
VDS [V]
Ciss
Coss
Crss
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
40
60
80
100
120
140
160
180
200
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80μs pulse test,Tch=25°C
10V
5V
VGS=0V
I
VSD [V]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3365 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3365-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251 |
| 2SK3365-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3365-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3365-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 Cut Tape |
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