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参数资料
| 型号： | 2SK3365 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 226K |
| 代理商： | 2SK3365 |
Data Sheet D14255EJ4V0DS
3
2SK3365
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100 120 140 160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
ID(pulse) = 120 A
RDS(on)
Limited
(at
V
GS
= 10
V
)
PW
= 100
μs
1 ms
0.1
Po
wer
Dissipation
Limited
10
ms
ID(DC) = 30 A
100
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
4
60
100
120
1
Pulsed
VGS =10 V
20
4.5 V
4.0 V
40
80
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
0.01
0.001
10
100
1000
Pulsed
02
3
1
4
6
57
TA = 25C
25C
50C
TA = 150C
75C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3367 | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3367-AZ | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3376MFV | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376MFV-BK | 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376TK | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3365-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251 |
| 2SK3365-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3365-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3365-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK3366 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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