参数资料
型号: 2SK3365
元件分类: 小信号晶体管
英文描述: 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
封装: TO-251, MP-3, 3 PIN
文件页数: 7/9页
文件大小: 226K
代理商: 2SK3365
Data Sheet D14255EJ4V0DS
5
2SK3365
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
50
10
0
50
100
150
ID = 15 A
30
20
10 V
4.5 V
VGS = 4.0 V
0.8
ISD
-
Diode
Forward
Current
-
A
0
1.2
1.6
VSD - Source to Drain Voltage - V
0.4
Pulsed
VGS = 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
0.01
1
10
100
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.01
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.1
10
100
1000
1
10
100
VDD = 15 V
VGS = 10 V
RG = 10
Ω
tr
tf
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Diode Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
μ
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
20
40
10
20
30
40
2
4
6
8
0
VDD = 24 V
15 V
6 V
VDS
12
14
10
ID = 30 A
VGS
10
30
相关PDF资料
PDF描述
2SK3367 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3367-AZ 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3376MFV N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3376MFV-BK 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3376TK N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
2SK3365-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251
2SK3365-Z 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3365-Z(AZ) 制造商:Renesas Electronics 功能描述:Cut Tape
2SK3365-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 Cut Tape
2SK3366 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR