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参数资料
| 型号： | 2SK3403 |
| 厂商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 东芝场效应晶体管硅?频道马鞍山类型 |
| 文件页数： | 2/6页 |
| 文件大小： | 241K |
| 代理商： | 2SK3403 |
2SK3403
2002-09-02
2
Electrical Characteristics
(Tc 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
25 V, V
DS
0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
10 A, V
DS
0 V
30
V
Drain cut-off current
I
DSS
V
DS
450 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
450
550
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
3.0
5.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
6 A
0.29
0.4
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
6 A
3.0
5.8
S
Input capacitance
C
iss
1600
Reverse transfer capacitance
C
rss
17
Output capacitance
C
oss
V
DS
25 V, V
GS
0 V, f 1 MHz
220
pF
Rise time
t
r
28
Turn-on time
t
on
45
Fall time
t
f
10
Switching time
Turn-off time
t
off
56
ns
Total gate charge
Q
g
34
Gate-source charge
Q
gs
19
Gate-drain charge
Q
gd
V
DD
360 V, V
GS
10 V, I
D
13 A
15
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
13
A
Pulse drain reverse current
(Note 1)
I
DRP
52
A
Forward voltage (diode)
V
DSF
I
DR
13 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
300
ns
Reverse recovery charge
Q
rr
I
DR
13 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
3.4
C
Marking
※
Type
K3403
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
0 V
10
V
V
GS
R
L
33.3
V
DD
200 V
I
D
6
A
Output
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3403(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 13A Rdson=0.4Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3403(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 13A Rdson=0.4Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3403_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3403_10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3403-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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