参数资料
型号: 2SK3483-AZ
厂商: Renesas Electronics America
文件页数: 6/10页
文件大小: 0K
描述: MOSFET N-CH 100V MP-3/TO-251
标准包装: 500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 28A
开态Rds(最大)@ Id, Vgs @ 25° C: 52 毫欧 @ 14A,10V
闸电荷(Qg) @ Vgs: 49nC @ 10V
输入电容 (Ciss) @ Vds: 2300pF @ 10V
功率 - 最大: 1W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: TO-251(MP-3)
包装: 散装
2SK3483
60
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
100
FORWARD TRANSFER CHARACTERISTICS
50
40
V GS = 10 V
4.5 V
10
1
T A = 150 ° C
75°C
25°C
-40°C
30
0.1
20
10
0
0.01
0.001
V D S = 10 V
P ulsed
0.0
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
5
4.0
V DS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V SD = 10 V
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.5
3.0
2.5
2.0
I D = 1 mA
10
1
T A = -40 ° C
25 ° C
75 ° C
150 ° C
1.5
0.1
1.0
0.5
0.01
V D S = 10 V
P ulsed
0.0
-50 -25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
90
80
Pulsed
70
60
I D = 28 A
Pulsed
70
60
50
14A
50
V GS = 4.5 V
40
40
30
10 V
30
5.6 A
20
20
10
0
10
0
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
20
4
I D - Drain Current - A
Data Sheet D15068EJ3V0DS
V GS - Gate to Source Voltage - V
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