参数资料
型号: 2SK3484-AZ
厂商: Renesas Electronics America
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N-CH 100V MP-3/TO-251
标准包装: 500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 16A
开态Rds(最大)@ Id, Vgs @ 25° C: 125 毫欧 @ 8A,10V
闸电荷(Qg) @ Vgs: 20nC @ 10V
输入电容 (Ciss) @ Vds: 900pF @ 10V
功率 - 最大: 1W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: TO-251(MP-3)
包装: 散装
2SK3484
ELECTRICAL CHARACTERISTICS (T A = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
I DSS
I GSS
V GS(off)
TEST CONDITIONS
V DS = 100 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
V DS = 10 V, I D = 1 mA
MIN.
1.5
TYP.
2.0
MAX.
10
±10
2.5
UNIT
μ A
μ A
V
Forward Transfer Admittance
Note
| y fs |
V DS = 10 V, I D = 8 A
4.7
9.5
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)1
R DS(on)2
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = 10 V, I D = 8 A
V GS = 4.5 V, I D = 8 A
V DS = 10 V
V GS = 0 V
f = 1 MHz
V DD = 50 V, I D = 8 A
V GS = 10 V
R G = 0 Ω
100
110
900
110
50
9.0
5.0
30
125
148
m Ω
m Ω
pF
pF
pF
ns
ns
ns
Fall Time
t f
4.0
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
V DD = 80 V
V GS = 10 V
I D = 16 A
20
3.0
5.0
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 16 A, V GS = 0 V
I F = 16 A, V GS = 0 V
di/dt = 100 A/ μ s
1.0
60
122
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = 20 → 0 V
R G = 25 Ω
50 Ω
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS
10%
0
V GS
90%
I D
I AS
BV DSS
V DS
V GS
0
I D
Wave Form
I D
0 10%
90%
I D
90%
10%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r
t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 Ω
V DD
Data Sheet D15069EJ3V0DS
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