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参数资料
| 型号： | 2SK3635-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 117K |
| 代理商： | 2SK3635-AZ |
Data Sheet D15932EJ3V0DS
2
2SK3635
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 4.0 A
3
5
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 4.0 A
0.34
0.43
Ω
Input Capacitance
Ciss
VDS = 10 V
390
pF
Output Capacitance
Coss
VGS = 0 V
95
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
45
pF
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 4.0 A
5
ns
Rise Time
tr
VGS = 10 V
7
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
19
ns
Fall Time
tf
6
ns
Total Gate Charge
QG
VDD = 160 V
12
nC
Gate to Source Charge
QGS
VGS = 10 V
2
nC
Gate to Drain Charge
QGD
ID = 8.0 A
6
nC
Body Diode Forward Voltage
VF(S-D)
IF = 8 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 8 A, VGS = 0 V
110
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
360
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK363BL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK363-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK363-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
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