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参数资料
| 型号： | 2SK3635-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 117K |
| 代理商： | 2SK3635-AZ |
Data Sheet D15932EJ3V0DS
5
2SK3635
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
VGS = 10 V
Pulsed
ID = 8.0 A
4.0 A
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rss
-
Capacitance
-
pF
1
10
100
1000
0.1
1
10
100
1000
VGS = 0 V
f = 1 M H z
C iss
C rss
C oss
VDS - Drain to Source Voltage - V
R
DS(
on)
-
Drain
to
Source
On-state
Resistance
-
Ω
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,
t
d(
off)
,t
f-
Switching
Time
-
ns
1
10
100
0.1
1
10
100
td(on)
tr
td(off)
tf
VDD = 100 V
VGS = 10 V
RG = 0
Ω
ID - Drain Current - A
V
DS
-
Drain
to
Source
Voltage
-
V
0
20
40
60
80
100
120
140
160
180
200
220
240
01
2
3
4
567
89 10 11 12 13 14 15
0
2
4
6
8
10
12
ID = 8.0 A
VDS
VDD = 160 V
100 V
40 V
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
Source
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF
-Diode
Forward
Current
-A
0.01
0.1
1
10
100
00.5
11.5
Pulsed
VGS = 0 V
trr
-
Rev
e
rs
e
Rec
o
v
e
ry
Ti
me
-
ns
1
10
100
1000
0.1
1
10
100
VGS = 0 V
di/dt = 100 A/μs
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK363BL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK363-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK363-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
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