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参数资料
| 型号： | 2SK3635-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 117K |
| 代理商： | 2SK3635-AZ |
Data Sheet D15932EJ3V0DS
4
2SK3635
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pulsed
VGS = 10 V
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.0001
0.001
0.01
0.1
1
10
100
05
10
15
Tch = 125
°C
75°C
25°C
VDS = 10 V
Pulsed
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
Cut-off
Voltage
-
V
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|
-
Forward
Transfer
Admittance
-
S
0
1
10
100
0.01
0.1
1
10
100
TA = 125°C
75°C
25°C
VDS = 10 V
Pulsed
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0.5
1
1.5
2
0.01
0.1
1
10
100
VGS = 10 V
Pulsed
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
6
8
10
121416
1820
ID = 8.0 A
Pulsed
1.6 A
4.0 A
R
DS(
on)
-
Drain
to
Source
On-state
Resistance
-
Ω
ID - Drain Current - A
R
DS(
on)
-
Drain
to
Source
On-state
Resistance
-
Ω
VGS - Gate to Source Voltage - V
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| 2SK3642-ZK | 64000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK363BL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK363-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK363-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
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