- 您现在的位置：买卖IC网 > PDF目录50004 > 2SK3797 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3797 |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 184K |
| 代理商： | 2SK3797 |
2SK3797
2009-09-29
3
5V
7V
5.8V
8V
6.2V
6.6V
10V
5.4V
VGS = 4 V
DRAIN CURRENT ID (A)
RDS (ON) – ID
DRAIN
S
O
URCE
O
N
RESIS
TANCE
R
DS
(
O
N
)
(
Ω
)
DRAIN
SOURCE VOLTAGE VDS
(V)
ID – VDS
DRAIN
CU
RREN
T
I
D
(A)
14
6
4
0
12
2
DRAIN
SOURCE VOLTAGE VDS
(V)
ID – VDS
DRAIN
CU
RREN
T
I
D
(A)
GATE
SOURCE VOLTAGE VGS
(V)
ID – VGS
DRAIN
CU
RREN
T
I
D
(A)
0
2
4
6
8
10
30
10V
20
25
5
GATE
SOURCE VOLTAGE VGS
(V)
VDS – VGS
0
6
8
10
0
4
8
12
16
20
8
10
4
2
DRAIN CURRENT ID (A)
Yfs – ID
FO
R
W
ARD
TRA
N
SIENT
ADMITT
ANCE
Y
fs
(S)
0.1
1
10
100
0.3
1
0.1
10
100
0.1
100
10
0
2
4
8
COMMON SOURCE
Tc
= 25°C
PULSE TEST
10
25
20
10
5
0
30
0
10
30
COMMON SOURCE
Tc
= 25°C
PULSE TEST
6.2V
7V
6.6V
25
20
5
VGS = 4V
8V
15
5V
15
5.8V
5.4V
COMMON SOURCE
Tc
= 25℃
PULSE TEST
ID = 13 A
ID = 6.5 A
ID = 3 A
VGS = 10 V
VGS = 15 V
COMMON SOURCE
Tc
= 25°C
PULSE TEST
Tc
= 55°C
100
25
6
15
DRAIN
S
O
URCE
VO
LT
AG
E
V
DS
(V)
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc
= 25°C
Tc
= 100°C
Tc
= 55°C
COMMON SOURCE
VDS = 20 V
PULSE TEST
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3811-ZP | 110 A, 40 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3812-ZP | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3812-ZP | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3814 | 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3797(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba 功能描述:Nch 600V 13A 0.43@10V TO220SIS Bulk |
| 2SK3797(Q,M) | 功能描述:MOSFET MOSFET N-Ch 600V 13A Rdson 0.43 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3798(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 4A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 4A 3.5@10V TO220SIS Bulk |
| 2SK3798(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 4A TO220SIS |
| 2SK3799 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。