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参数资料
| 型号： | 2SK3812-ZP |
| 元件分类： | JFETs |
| 英文描述： | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, MP-25ZP, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 141K |
| 代理商： | 2SK3812-ZP |
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MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 2.8 m
MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 m
MAX. (VGS = 4.5 V, ID = 55 A)
High current rating: ID(DC) = ±110 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±110
A
Drain Current (pulse)
Note1
ID(pulse)
±440
A
Total Power Dissipation (TC = 25°C)
PT1
213
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Energy
Note2
EAS
397
mJ
Repetitive Avalanche Current
Note3
IAR
63
A
Repetitive Avalanche Energy
Note3
EAR
397
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20 → 0 V, L = 100
H
3. Tch(peak)
≤ 150°C, RG = 25
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3812-ZP
TO-263 (MP-25ZP)
(TO-263)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3814 | 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3818 | 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3812-ZP-A E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3812-ZP-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3812-ZP-E1-AY | 功能描述:MOSFET N-CH 60V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3812-ZP-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3813-AZ | 功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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