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参数资料
| 型号： | 2SK3812-ZP |
| 元件分类： | JFETs |
| 英文描述： | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, MP-25ZP, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 141K |
| 代理商： | 2SK3812-ZP |
Data Sheet D16738EJ1V0DS
2
2SK3812
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 55 A
50
110
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 55 A
2.3
2.8
m
RDS(on)2
VGS = 4.5 V, ID = 55 A
2.6
3.7
m
Input Capacitance
Ciss
VDS = 10 V
16800
pF
Output Capacitance
Coss
VGS = 0 V
1600
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
1000
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 55 A
42
ns
Rise Time
tr
VGS = 10 V
160
ns
Turn-off Delay Time
td(off)
RG = 0
140
ns
Fall Time
tf
15
ns
Total Gate Charge
QG
VDD = 48 V
250
nC
Gate to Source Charge
QGS
VGS = 10 V
41
nC
Gate to Drain Charge
QGD
ID = 110 A
66
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 110 A, VGS = 0 V
0.87
1.5
V
Reverse Recovery Time
trr
IF = 110 A, VGS = 0 V
53
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
74
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3812-ZP-A E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3812-ZP-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3812-ZP-E1-AY | 功能描述:MOSFET N-CH 60V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3812-ZP-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3813-AZ | 功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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