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参数资料
| 型号： | 2SK3797 |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 184K |
| 代理商： | 2SK3797 |
2SK3797
2009-09-29
5
15 V
TEST CIRCUIT
WAVEFORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 10.7mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
A
V
A
LANCHE
EN
ERGY
E
AS
(
m
J)
1200
800
400
1000
0
25
50
75
100
125
150
rth – tw
PULSE WIDTH tw (s)
NO
RMALI
Z
ED
TRANSIENT
THE
R
MAL
IMPEDANCE
r
th
(t
)/R
th
(c
h-c)
0.01
10μ
0.1
1
10
100μ
1ｍ
10ｍ
100ｍ
1
10
0.001
DRAIN
SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
DRAIN
CU
RREN
T
I
D
(A)
0.1
1
10
100
10
1000
100
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
*SINGLE NONREPETITIVE
PULSE Tc
= 25°C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
DC OPERATION
Tc
= 25°C
1 ms *
VDSS max
ID max (CONTINOUS)
ID max (PULSED) *
100
μs *
T
PDM
t
Duty
= t/T
Rth (ch-c) = 2.5°C/W
600
200
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| 2SK3812-ZP | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3814 | 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3797(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba 功能描述:Nch 600V 13A 0.43@10V TO220SIS Bulk |
| 2SK3797(Q,M) | 功能描述:MOSFET MOSFET N-Ch 600V 13A Rdson 0.43 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3798(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 4A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 4A 3.5@10V TO220SIS Bulk |
| 2SK3798(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 4A TO220SIS |
| 2SK3799 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 900V, TO-220SIS; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
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