- 您现在的位置：买卖IC网 > PDF目录33503 > 2SK3813-Z 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA PDF资料下载
参数资料
| 型号： | 2SK3813-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | MP-3Z, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 243K |
| 代理商： | 2SK3813-Z |
Data Sheet D16739EJ3V0DS
2
2SK3813
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 30 A
21
42
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 30 A
4.2
5.3
m
Ω
RDS(on)2
VGS = 4.5 V, ID = 30 A
5.3
7.1
m
Ω
Input Capacitance
Ciss
VDS = 10 V
5500
pF
Output Capacitance
Coss
VGS = 0 V
740
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
490
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 30 A
25
ns
Rise Time
tr
VGS = 10 V
8.5
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
81
ns
Fall Time
tf
10
ns
Total Gate Charge
QG
VDD = 32 V
96
nC
Gate to Source Charge
QGS
VGS = 10 V
18
nC
Gate to Drain Charge
QGD
ID = 60 A
23.5
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 60 A, VGS = 0 V
0.94
1.5
V
Reverse Recovery Time
trr
IF = 60 A, VGS = 0 V
35
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
31
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3815 | 23 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3816-TL | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3820-TL | 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3820 | 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3813-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 60A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK3814-AZ | 功能描述:MOSFET N-CH 60V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3814-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk |
| 2SK3814-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3815-DL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 23A SOT404 |
发布紧急采购，3分钟左右您将得到回复。