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参数资料
| 型号： | 2SK3813-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | MP-3Z, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 243K |
| 代理商： | 2SK3813-Z |
Data Sheet D16739EJ3V0DS
4
2SK3813
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
50
100
150
200
250
300
012
3
4
5
VGS = 10 V
Pulsed
4.5 V
VDS - Drain to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0.001
0.01
0.1
1
10
100
1000
01
2
345
VDS = 10 V
Pulsed
Tch =
55°C
25°C
75°C
125°C
150°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
C
u
t-
off
Voltage
-
V
0
0.5
1
1.5
2
2.5
3
3.5
4
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|
-
Forward
T
ransfer
Admittan
c
e
-
S
0.1
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
Tch =
55°C
25°C
75°C
125°C
150°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
m
Ω
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
10 V
Pulsed
VGS = 4.5 V
ID - Drain Current - A
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
m
Ω
0
2
4
6
8
10
0
5
10
15
20
ID = 30 A
Pulsed
VGS - Gate to Source Voltage - V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3815 | 23 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3816-TL | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3820-TL | 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3813-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 60A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK3814-AZ | 功能描述:MOSFET N-CH 60V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3814-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk |
| 2SK3814-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3815-DL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 23A SOT404 |
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