参数资料
型号: 2SK3813-Z
元件分类: 小信号晶体管
英文描述: 60 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: MP-3Z, 3 PIN
文件页数: 9/10页
文件大小: 243K
代理商: 2SK3813-Z
Data Sheet D16739EJ3V0DS
6
2SK3813
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
-Single
Avalanche
Current
-
A
1
10
100
IAS = 37 A
EAS = 137 mJ
VDD = 20 V
RG = 25
Ω
VGS = 20
→ 0 V
Starting Tch = 25°C
L - Inductive Load - H
Energy
Derating
Factor
-
%
0
20
40
60
80
100
25
50
75
100
125
150
VDD = 20 V
RG = 25
Ω
VGS = 20
→ 0 V
IAS
≤ 37 A
Starting Tch - Starting Channel Temperature - °C
1
μ
10
μ
100
μ
1 m
10 m
相关PDF资料
PDF描述
2SK3815 23 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3816-TL 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3817 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3820-TL 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3820 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK3813-Z-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 60A 3-Pin(2+Tab) TO-252 Cut Tape
2SK3814-AZ 功能描述:MOSFET N-CH 60V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SK3814-Z-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk
2SK3814-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3815-DL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 23A SOT404