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| 型号： | 2SK3814-AZ |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V MP-3/TO-251 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 30A，10V |
| 闸电荷(Qg) @ Vgs： | 95nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5450pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | TO-251（MP-3） |
| 包装： | 散装 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Super low on-state resistance
R DS(on)1 = 8.7 m Ω MAX. (V GS = 10 V, I D = 30 A)
R DS(on)2 = 10.5 m Ω MAX. (V GS = 4.5 V, I D = 30 A)
? Low C iss : C iss = 5450 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
2SK3814
2SK3814-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
(TO-251)
Drain to Source Voltage (V GS = 0 V)
V DSS
60
V
(TO-252)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V GSS
I D(DC)
±20
±60
V
A
Drain Current (pulse)
Note1
I D(pulse)
±240
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
84
1.0
150
? 55 to +150
W
W
°C
°C
Single Avalanche Energy
Note2
E AS
102
mJ
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note3
Note3
I AR
E AR
32
102
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 30 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
3. T ch(peak) ≤ 150°C, R G = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16740EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3814-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk |
| 2SK3814-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3815-DL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 23A SOT404 |
| 2SK3816-DL-1E | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NCH 4V DRIVE SERIES 制造商:ON Semiconductor 功能描述:REEL / NCH 4V DRIVE SERIES |
| 2SK3816-DL-E | 功能描述:MOSFET N-CH 60V 40A SMP-FD RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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