- 您现在的位置：买卖IC网 > PDF目录50005 > 2SK3843 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3843 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-9F1C, 4 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 167K |
| 代理商： | 2SK3843 |
2SK3843
2009-12-21
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (UMOSIII)
2SK3843
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Low drainsource ON-resistance: RDS (ON) = 2.7 m (typ.)
High forward transfer admittance: |Yfs| = 120 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
40
V
Drain–gate voltage (RGS = 20 k)
VDGR
40
V
Gate–source voltage
VGSS
±20
V
DC
(Note 1)
ID
75
A
Drain current
Pulse (Note 1)
IDP
300
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single-pulse avalanche energy
(Note 2)
EAS
542
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
1.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 H, IAR = 75 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
1
3
4
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3845 | 70 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3850 | 700 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3850-TL | 700 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3852-TL | 400 mA, 900 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3866 | 0.33 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。