参数资料
型号: 2SK3845
元件分类: JFETs
英文描述: 70 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-16C1B, 3 PIN
文件页数: 1/6页
文件大小: 321K
代理商: 2SK3845
2SK3845
2006-08-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3845
Switching Regulator, DC-DC Converter Applications and
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.)
High forward transfer admittance: |Yfs| = 88 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kW)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
70
Drain current
Pulse (Note 1)
IDP
280
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
328
mJ
Avalanche current
IAR
70
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 91 mH, RG = 25 W, IAR = 70 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1
3
2
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